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October 27, 2012

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GATE-2012 ECE Q26 (electronic devices)

Krishna Sankar13 years ago13 years ago04 mins

Question 26 on Electronic Devices from GATE (Graduate Aptitude Test in Engineering) 2012 Electronics and Communication Engineering paper. Q26. The source of a silicon (), n-channel MOS transistor has an area of and a depth of  . If the dopant density in the source is , the number of holes in the source region with…

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